Mode-Modulation Structure Based on 650 nm Ridge Waveguide Edge-Emitting Laser

Traditional laser diodes operating at 650 nm are more prone to high-order mode excitation, resulting in poorer beam quality. In this paper, we designed GaInP–AlGaInP (LD) with a range and trench mode-modulation structure based on the of edge-emitting (EEL) diodes. The effect three-trench was investigated theoretically experimentally. right chips demonstrated good quality while maintaining high power output. An electro-optical conversion efficiency 56% slope 1.32 W/A 40 mA current. maximum optical output reached 40.8 mW.